Wafer clean sputtering process

Details Wafer clean sputtering process Wafer clean sputtering process

1995-03-13

1998-06-02

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419235, C23C 1434

Patent

active

057593604

ABSTRACT:
A method of precleaning a silicon wafer to remove a layer of native silicon oxide thereon comprising adding a mixture of argon and oxygen to a plasma etch chamber including a wafer to be cleaned mounted on a cathode in said chamber, while maintaining the pressure in the chamber below about 3 millitorr. The oxygen is added to react with silicon atoms in the plasma but not with silicon atoms of the single crystal silicon wafer. The presence of oxygen in the plasma at low pressure ensures steady plasma generation and uniform etching across the wafer.

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