Wafer bevel polymer removal

Details Wafer bevel polymer removal Wafer bevel polymer removal

2004-09-03

2009-10-06

Alanko, Anita K (Department: 1792)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S049000, C216S079000, C438S710000, C438S725000, C438S906000, C134S001200, C134S902000

Reexamination Certificate

active

07597816

ABSTRACT:
A method of forming a semiconductor device is provided. A wafer with a dielectric layer disposed under a photoresist mask is placed in an etch chamber. The dielectric layer is etched. The wafer is raised. A cleaning gas is provided. A plasma is formed from the cleaning gas. A polymer that has formed on the bevel of the wafer is removed using the plasma from the cleaning gas. The wafer is removed from the etch chamber.

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