Wafer area pressure control for plasma confinement

Details Wafer area pressure control for plasma confinement Wafer area pressure control for plasma confinement

2004-10-15

2008-12-30

MacArthur, Sylvia R. (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C315S111210, C118S7230AN

Reexamination Certificate

active

07470627

ABSTRACT:
A plasma processing chamber is provided which provides improved wafer area pressure control. The plasma processing chamber is a vacuum chamber with a device connected for generating and sustaining a plasma. Part of this device would be an etchant gas source and an exhaust port. A confinement ring defines an area above a wafer. The wafer area pressure is dependent on the pressure drop across the confinement ring. The confinement ring is part of a wafer area pressure control device that provides wafer area pressure control range greater than 100%. Such a wafer area pressure control device may be three adjustable confinement rings and a confinement block on a holder that may be used to provide the desired wafer area pressure control.

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International Search Report, Date of Mailing: Feb. 25, 2002.
International Search Report, Date of Mailing: May 24, 2004.

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