Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-09-18
2007-09-18
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21375, C257SE21704
Reexamination Certificate
active
11365223
ABSTRACT:
A semiconductor high-voltage device comprising a voltage sustaining layer between a n+-region and a p+-region is provided, which is a uniformly doped n (or p)-layer containing a plurality of floating p (or n)-islands. The effect of the floating islands is to absorb a large part of the electric flux when the layer is fully depleted under high reverse bias voltage so as the peak field is not increased when the doping concentration of voltage sustaining layer is increased. Therefore, the thickness and the specific on-resistance of the voltage sustaining layer for a given breakdown voltage can be much lower than those of a conventional voltage sustaining layer with the same breakdown voltage. By using the voltage sustaining layer of this invention, various high voltage devices can be made with better relation between specific on-resistance and breakdown voltage.
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Akin Gump Strauss Hauer & Feld & LLP
Coleman W. David
Third Dimension (3D) Semiconductor, Inc.
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