Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-01-25
2005-01-25
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S981000, C438S594000
Reexamination Certificate
active
06846714
ABSTRACT:
An EEPROM device having voltage limiting charge pumping circuitry includes charge pumping circuitry that limits the voltage supplied to the high voltage transistors to levels below the breakdown field of the tunnel oxide layer. The EEPROM device includes a substrate having a programming region, a tunnel region, a sensing region, and a low voltage region. A first oxide layer having a first thickness overlies the tunnel region and the sensing region. A second oxide layer having a second thickness overlies the low voltage region. The first oxide thickness is greater than the second oxide thickness. A charge pumping circuit is coupled to the programming region and to the tunnel region. The charge pumping circuit impresses a voltage level across the first oxide layer that is below the field breakdown voltage of first oxide layer. A process for fabricating the device is also provided.
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Ilgenstein Kerry
Mehta Sunil D.
Brinks Hofer Gilson & Lione
Lattice Semiconductor Corporation
Wilczewski M.
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