Voltage level converting circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307451, 307550, H03K 19094, H03K 19092

Patent

active

049260707

ABSTRACT:
A voltage level converting circuit for outputting an output signal of a write voltage level responsive to a read voltage level input signal comprises an inverter circuit biased with a power supply of the first voltage level. The input signal is supplied through a transfer gate circuit. A MOS transistor is provided between the input of the inverter circuit and a power supply of the write voltage level to pull-up the voltage level of the input to the inverter circuit responsive to the output of the inverter circuit. Another MOS transistor is provided between the output of the inverter circuit and ground to pull-down the output voltage level responsive to the input signal.

REFERENCES:
patent: 4384216 (1983-05-01), Pricer
patent: 4506164 (1985-03-01), Higuchi
patent: 4672243 (1987-06-01), Kirsch
A Programmable 256K CMOS EPROM with On-Chip Test Circuits, by Tanaka et al, 1984 IEEE International Solid-State Circuits Conference, pp. 148 and 149.
Fast Programmable 256K Read Only Memory with On-Chip Test Circuits, Shigeru Atsumi et al, IEEE Journal of Solid-State Circuits, vol. SC-20, No. 1, Feb. 1985, pp. 422-427.

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