Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-02-27
2000-12-05
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257516, 257532, 257535, 257299, 257312, H01L 27108, H01L 2976, H01L 2994, H01L 31119
Patent
active
061570540
ABSTRACT:
A voltage generator for electrically programmable non-volatile memory cells, constructed of a number of charge pump circuits having inputs controlled by a number of phase generators. The charge pump circuits are laid as pairs of first and second charge pump circuits. The first charge pump circuits are active when the second charge pump circuits are inactive, and vice versa.
REFERENCES:
patent: 4591738 (1986-05-01), Bialas, Jr. et al.
patent: 4914546 (1990-04-01), Alter
patent: 5023694 (1991-06-01), Yeh
patent: 5166858 (1992-11-01), Frake et al.
patent: 5202588 (1993-04-01), Matsuo et al.
patent: 5208597 (1993-05-01), Early et al.
patent: 5263000 (1993-11-01), Van Buskirk et al.
patent: 5301097 (1994-04-01), McDaniel
patent: 5313429 (1994-05-01), Chevallier et al.
patent: 5684304 (1997-11-01), Smears
patent: 5773872 (1998-06-01), Kobatake
patent: 5874770 (1999-02-01), Saia et al.
patent: 5883423 (1999-03-01), Patwa et al.
Caser Fabio Tassan
Defendi Marco
Dellabora Marco
Cao Phat X.
Galanthay, Esq. Theodore E.
Monin, Jr. Donald L.
STMicroelectronics S.r.l.
Tarleton, Esq. E. Russell
LandOfFree
Voltage generator for electrically programmable non-volatile mem does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Voltage generator for electrically programmable non-volatile mem, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Voltage generator for electrically programmable non-volatile mem will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-963745