Semiconductor device and production method thereof

Details Semiconductor device and production method thereof Semiconductor device and production method thereof

1990-05-10

1992-12-08

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, 257201, H01L 2980, H01L 29161, H01L 2912

Patent

active

051702304

ABSTRACT:
A semiconductor device includes an InP substrate, an intrinsic InGaAs channel layer formed on the InP substrate and lattice matched to the InP substrate, a doped GaAsSb carrier supply layer formed on the intrinsic InGaAs channel layer and lattice matched to the InP substrate, a gate electrode formed on the doped GaAsSb carrier supply layer, and a source electrode and a drain electrode which are respectively formed on the doped GaAsSb carrier supply layer and located on both sides of the gate electrode.

REFERENCES:
patent: 4733283 (1988-03-01), Kuroda
patent: 4764796 (1988-08-01), Sasaki et al.

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