Voltage generation circuit and semiconductor memory device...

Details Voltage generation circuit and semiconductor memory device... Voltage generation circuit and semiconductor memory device...

2008-02-04

2009-02-17

Yoha, Connie C (Department: 2827)

Static information storage and retrieval

Read/write circuit

Including level shift or pull-up circuit

C365S189090, C365S222000, C365S194000

Reexamination Certificate

active

07492647

ABSTRACT:
A voltage generation circuit and semiconductor memory device including the same are provided. The voltage generation circuit includes: a voltage level detector, which detects a level of a first high voltage to generate a first high voltage level detection signal and detects a level of a second high voltage to generate a second high voltage level detection signal; a control signal generator, which generates at least four pumping control signals in sequence when the first high voltage level detection signal is active, generates a control signal when the first high voltage level detection signal is inactive, and generates a first one of the at least four pumping control signals in response to a level of a power supply voltage; and a voltage generator, which pumps a boost node in response to the at least four pumping control signals to generate the first high voltage and transmits charge from the boost node to a second high voltage generation terminal in response to the control signal to generate the second high voltage.

REFERENCES:
patent: 6320457 (2001-11-01), Yang
patent: 6356501 (2002-03-01), Park et al.
patent: 7042774 (2006-05-01), Kim
patent: 7319626 (2008-01-01), Cheon

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