Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2006-06-15
2008-08-05
Le, Thong Q (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S226000, C365S203000
Reexamination Certificate
active
07408817
ABSTRACT:
A voltage generating circuit for a semiconductor memory device. The voltage generating circuit includes a multi-boosting unit for stepping up a power supply voltage, a transfer transistor connected to a final boosting node of the multi-boosting unit and an output node, and a charge-sharing element, electrically connected to the final boosting node and a gate node of the transfer transistor, enabled during at least a part of the period the power supply voltage is stepped-up by the multi-boosting unit and performing charge sharing between the final boosting node and the gate node of the transfer transistor.
REFERENCES:
patent: 5510749 (1996-04-01), Arimoto
patent: 5673229 (1997-09-01), Okamura et al.
patent: 5687128 (1997-11-01), Lee et al.
patent: 6031779 (2000-02-01), Takahashi et al.
patent: 6191963 (2001-02-01), McPartland et al.
patent: 6967523 (2005-11-01), DeMone
patent: 2002-157885 (2002-05-01), None
patent: 2003-259626 (2003-09-01), None
patent: 100172380 (1998-10-01), None
Bae Won-Il
Jang Seong-Jin
Kim Jun-Hyung
F. Chau & Associates LLC
Le Thong Q
Samsung Electronics Co,. Ltd.
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