Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-09-30
2000-04-18
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257279, 257360, 257364, H01C 2976
Patent
active
060518561
ABSTRACT:
An improved FET for use as a voltage-controlled resistor includes a p-type control gate and a high-resistance connection to receive a control signal. The bootstrap frequency for the device is much lower than the signal frequency so that the signal frequency is decoupled from the control voltage to reduce distortion.
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patent: 5214298 (1993-05-01), Yuan et al.
"The Bootstrapped Gate FET (BGFET)--A New Control Transistor," Bayruns et al., GaAs IC Symposium, 0-7803-2966-X/95.
Barrera Joseph
McKay Thomas G.
Dietrich Michael
Monin, Jr. Donald L.
Samsung Electronics Co,. Ltd.
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