Voltage-controlled resistor utilizing bootstrap gate FET

Details Voltage-controlled resistor utilizing bootstrap gate FET Voltage-controlled resistor utilizing bootstrap gate FET

1997-09-30

2000-04-18

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257279, 257360, 257364, H01C 2976

Patent

active

060518561

ABSTRACT:
An improved FET for use as a voltage-controlled resistor includes a p-type control gate and a high-resistance connection to receive a control signal. The bootstrap frequency for the device is much lower than the signal frequency so that the signal frequency is decoupled from the control voltage to reduce distortion.

REFERENCES:
patent: 4143387 (1979-03-01), Stikvoort
patent: 4157557 (1979-06-01), Sato et al.
patent: 4442445 (1984-04-01), Malik et al.
patent: 4843033 (1989-06-01), Plumton et al.
patent: 4895811 (1990-01-01), Inoue
patent: 5011785 (1991-04-01), Nguyen
patent: 5214298 (1993-05-01), Yuan et al.
"The Bootstrapped Gate FET (BGFET)--A New Control Transistor," Bayruns et al., GaAs IC Symposium, 0-7803-2966-X/95.

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