Voltage-based timing control of memory bit lines

Details Voltage-based timing control of memory bit lines Voltage-based timing control of memory bit lines

2006-05-16

2006-05-16

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Read/write circuit

Precharge

C365S189070, C365S189110, C365S204000

Reexamination Certificate

active

07046566

ABSTRACT:
Circuitry and methods are provided for controlling memory operation by comparing bit line voltages to preset reference voltages. By relying on bit line voltage levels to determine when to start and end each stage of a read or write operation, reliance on precisely tuned delay chains is removed. Parasitic effects are automatically accounted for, as well as process, voltage, and temperature variations. This precise matching of operation timing to memory bit line conditions results in improved system performance.

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patent: 6762970 (2004-07-01), Joo
patent: 6842388 (2005-01-01), Origasa et al.

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