Volatile memory devices and methods for forming same

Details Volatile memory devices and methods for forming same Volatile memory devices and methods for forming same

2007-07-10

2007-07-10

Crane, Sara (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S243000, C438S244000, C438S245000, C438S246000

Reexamination Certificate

active

10983664

ABSTRACT:
A method for forming a volatile memory device. A substrate comprising a pair of neighboring trenches is provided, each trench comprising a capacitor. A collar insulating layer is formed on an upper sidewall of each trench. The collar insulating layer comprises a low level portion and a high level portion adjacent to a predetermined active area of the volatile memory device.

REFERENCES:
patent: 5736760 (1998-04-01), Hieda et al.
patent: 6987044 (2006-01-01), Chen et al.

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