Void-free tungsten-plug contact for ULSI interconnection

Details Void-free tungsten-plug contact for ULSI interconnection Void-free tungsten-plug contact for ULSI interconnection

1998-06-19

2000-09-12

Hardy, David

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438649, 438651, 438653, 438656, 438660, 438663, 438672, 438675, 438775, H01L 214763

Patent

active

061177687

ABSTRACT:
A doped oxide and an undoped oxide are formed on a substrate. Then, the substrate is annealed to re-flow the doped oxide layer. The doped oxide is then etched back. Next, a contact hole is created by etching. An amorphous silicon layer is formed on the surface of the doped oxide layer and along the surface of the contact hole. Next, high temperature is used to recover the etching damage and simultaneously transform or convert the amorphous silicon into a polysilicon layer. A titanium layer and a titanium nitride are respectively formed onto the polysilicon layer. Next, rapid thermal process (RTP) is introduced to form a titanium silicide beneath the titanium nitride layer. A tungsten layer is formed on the titanium nitride layer and refilled into the contact hole. The tungsten layer is then etched back to form a tungsten plug with void-free in the contact hole. A conductive layer is formed on the titanium nitride layer. The titanium silicide, titanium nitride layer and the conductive layer are patterned to define a metal line.

REFERENCES:
patent: 5554565 (1996-09-01), Liaw et al.
patent: 5899741 (1999-05-01), Tseng et al.

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