Void free, silicon filled trenches in semiconductors

Details Void free, silicon filled trenches in semiconductors Void free, silicon filled trenches in semiconductors

2007-01-02

2007-01-02

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21588

Reexamination Certificate

active

10882752

ABSTRACT:
The present invention provides methods of producing substantially void-free trench structures. After deposition of an a-Si or polysilicon layer in a trench formed in a semiconductor, the a-Si or polysilicon is exposed to hydrogen at an elevated temperature.

REFERENCES:
patent: 5888876 (1999-03-01), Shiozawa et al.
patent: 6495294 (2002-12-01), Yamauchi et al.
patent: 6552380 (2003-04-01), Sato et al.

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