Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-12-11
2007-12-11
Sarkar, Asok K. (Department: 2891)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S593000, C438S257000, C438S211000, C438S201000, C257SE21679
Reexamination Certificate
active
11201378
ABSTRACT:
A method of forming a dielectric between memory cells in a device includes forming multiple memory cells, where a gap is formed between each of the multiple memory cells. The method further includes performing a high density plasma deposition (HDP) process to fill at least a portion of the gap between each of the multiple memory cells with a dielectric material.
REFERENCES:
patent: 6635943 (2003-10-01), Hui et al.
patent: 2003/0193064 (2003-10-01), Wu
patent: 2006/0001073 (2006-01-01), Chen et al.
Ngo Minh Van
Nickel Alexander
Pham Hieu
Qian Weidong
Tokuno Hirokazu
Advanced Micro Devices , Inc.
Herrity Snyder LLP
Sarkar Asok K.
Spansion LLC
Yevsikov Victor V.
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