Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-02-08
2011-02-08
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S627000, C438S643000, C438S650000, C438S660000, C257SE21082, C257SE21577, C257SE21584, C257SE21586
Reexamination Certificate
active
07884012
ABSTRACT:
A method is provided for void-free copper (Cu) filling of recessed features in a semiconductor device. The method includes providing a patterned substrate containing a recessed feature, depositing a barrier film on the patterned substrate, including in the recessed feature, depositing a Ru metal film on the barrier film, and depositing a discontinuous Cu seed layer on the Ru metal film, where the Cu seed layer partially covers the Ru metal film in the recessed feature. The method further includes exposing the substrate to an oxidation source gas that oxidizes the Cu seed layer and the portion of the Ru metal film not covered by the Cu seed layer, heat-treating the oxidized Cu seed layer and the oxidized Ru metal film under high vacuum conditions or in the presence of an inert gas to activate the oxidized Ru metal film for Cu plating, and filling the recessed feature with bulk Cu metal. The exposure to the oxidation source gas can be an air exposure commonly encountered in semiconductor device manufacturing prior to Cu plating.
REFERENCES:
patent: 4851895 (1989-07-01), Green et al.
patent: 4929468 (1990-05-01), Mullendore
patent: 4938999 (1990-07-01), Jenkin
patent: 5171610 (1992-12-01), Liu
patent: 5372849 (1994-12-01), McCormick et al.
patent: 5877086 (1999-03-01), Aruga
patent: 6063705 (2000-05-01), Vaartstra
patent: 6074945 (2000-06-01), Vaartstra et al.
patent: 6077780 (2000-06-01), Dubin
patent: 6232230 (2001-05-01), Iacoponi
patent: 6242349 (2001-06-01), Nogami et al.
patent: 6287435 (2001-09-01), Drewery et al.
patent: 6303809 (2001-10-01), Chi et al.
patent: 6319832 (2001-11-01), Uhlenbrock et al.
patent: 6399486 (2002-06-01), Chen et al.
patent: 6420583 (2002-07-01), Lienhard et al.
patent: 6440495 (2002-08-01), Wade et al.
patent: 6440854 (2002-08-01), Rozbicki
patent: 6444263 (2002-09-01), Paranjpe et al.
patent: 6508919 (2003-01-01), Licata et al.
patent: 6605735 (2003-08-01), Kawano et al.
patent: 6627542 (2003-09-01), Gandikota et al.
patent: 6713373 (2004-03-01), Omstead
patent: 6989321 (2006-01-01), Yamasaki et al.
patent: 7037836 (2006-05-01), Lee
patent: 7107998 (2006-09-01), Greer et al.
patent: 7115498 (2006-10-01), Adem
patent: 7264846 (2007-09-01), Chang et al.
patent: 7270848 (2007-09-01), Suzuki et al.
patent: 7279421 (2007-10-01), Suzuki
patent: 7285308 (2007-10-01), Hendrix et al.
patent: 7288479 (2007-10-01), Suzuki
patent: 7459396 (2008-12-01), Suzuki et al.
patent: 7694413 (2010-04-01), Johnston et al.
patent: 7704879 (2010-04-01), Suzuki
patent: 2003/0129306 (2003-07-01), Wade et al.
patent: 2004/0241321 (2004-12-01), Ganguli et al.
patent: 2005/0110142 (2005-05-01), Lane et al.
patent: 2006/0113675 (2006-06-01), Chang et al.
patent: 2006/0121733 (2006-06-01), Kilpela et al.
patent: 2006/0131751 (2006-06-01), Minamihaba et al.
patent: 2006/0199372 (2006-09-01), Chung et al.
patent: 2006/0220248 (2006-10-01), Suzuki
patent: 2006/0237800 (2006-10-01), Rudeck
patent: 2006/0240187 (2006-10-01), Weidman
patent: 2006/0258152 (2006-11-01), Haider
patent: 2006/0273431 (2006-12-01), He et al.
patent: 2007/0059502 (2007-03-01), Wang et al.
patent: 2007/0072415 (2007-03-01), Suzuki
patent: 2007/0099422 (2007-05-01), Wijekoon et al.
patent: 2007/0141735 (2007-06-01), Joo et al.
patent: 2007/0281457 (2007-12-01), Chu et al.
patent: 2007/0284736 (2007-12-01), Yang et al.
patent: 2008/0081464 (2008-04-01), Matsuda et al.
patent: 2008/0237029 (2008-10-01), Tang et al.
patent: 2008/0264774 (2008-10-01), Baskaran et al.
patent: 2008/0284020 (2008-11-01), Ishizaka
patent: 2009/0085211 (2009-04-01), Robison et al.
patent: 2206217 (1998-11-01), None
patent: 0620291 (1994-10-01), None
patent: 2004146516 (2004-05-01), None
patent: 0012777 (2000-03-01), None
patent: 0026432 (2000-05-01), None
patent: 2005034223 (2005-04-01), None
U.S. Patent and Trademark Office, Final Office Action received for related U.S. Appl. No. 11/693,298 dated Dec. 22, 2009, 21 pp.
Chen et al., Novel Post Electroplating in-situ Rapid Annealing Process for Advanced Copper interconnect Application, IEEE, 2000, pp. 194-196.
U.S. Patent and Trademark Office, Non-final Office Action received for related U.S. Appl. No. 11/864,960 dated Jul. 24, 2009, 30 pp.
U.S. Patent and Trademark Office, Non-final Office Action received for related U.S. Appl. No. 11/693,298 dated Apr. 13, 2009, 16 pp.
Czekaj, C. et al. Inorganic Chemistry (1988) No. 27, pp. 8-10.
Wang et al., Low-temperature chemical vapor deposition and scaling limit of ultrathin Ru films, Applied Physics Letters (Feb. 23, 2004) vol. 84, No. 8, pp. 1380-1382, American Institute of Physics, Melville, NY.
Boyd, Edwin P. et al., Chemical vapor deposition of metallic thin films using homonuclear and heteronuclear metal carbonyls, Chem. Mater. (1997) No. 9, pp. 1154-1158.
Green, M.L. et al., Chemical vapor deposition of ruthenium and ruthenium dioxide films, Journal of the Electrochemical Society, vol. 132, No. 11, pp. 2677-2685.
Cheng, Wei-Yuan et al., Initial growth of chemical-vapor-deposited Ru from bis(hexafluoroacetylacetonate) dicarbonyl ruthenium, Thin Solid Films 483 (2005) pp. 31-37.
Gatineau, Julien et al., Deposition of highly pure ruthenium thin films with a new metal-organic precursor, Surface and Coatings Technology 201 (2007), pp. 9146-9148.
Bykov, A. F. et al., Investigation of thermal properties of ruthenium(III) B-diketonate precursors for preparation of RuO2 films by CVD, Journal of Thermal Analysis, vol. 46 (1996) pp. 1551-1565.
European Patent Office, International Search Report and Written Opinion of corresponding PCT Application No. PCT/US2009/031414, dated Apr. 29, 2009, 14 pp.
European Patent Office, International Search Report and Written Opinion of corresponding PCT Application No. PCT/IB2009/050910, dated Jul. 2, 2009, 15 pp.
Ishizaka Tadahiro
Jomen Miho
Rullan Jonathan
Suzuki Kenji
Landau Matthew C
Nicely Joseph C
Tokyo Electron Limited
Wood Herron & Evans LLP
LandOfFree
Void-free copper filling of recessed features for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Void-free copper filling of recessed features for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Void-free copper filling of recessed features for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2648466