Void-free and volcano-free tungsten-plug for ULSI interconnectio

Details Void-free and volcano-free tungsten-plug for ULSI interconnectio Void-free and volcano-free tungsten-plug for ULSI interconnectio

1998-07-27

2000-10-24

Hardy, David

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438649, 438651, 438653, 438656, 438660, 438663, 438672, 438675, 438775, H01L 214763

Patent

active

061366978

ABSTRACT:
The present invention is a method of fabricating void-free and volcano-free tungsten plugs. A silicon film was formed over contact hole surfaces for restricting the reflow of a dielectric layer. A titanium film is formed over the silicon layer. By performing a thermal process to the silicon layer and the titanium layer in a nitride-containing environment, the etching damage to the substrate can be recovered and a silicon silicide and a titanium nitride can be formed. The contact resistance of plugs can be significantly reduced, when compared with known technology. The undesired formation of voids and volcano can be eliminated. The method can be employed to fabricate defect-free advanced ULSI devices.

REFERENCES:
patent: 5552340 (1996-09-01), Lee et al.
patent: 5554565 (1996-09-01), Liaw et al.
patent: 5672543 (1997-09-01), Chang et al.
patent: 5899741 (1999-08-01), Tseng et al.
Annie Tissier et al., Planarization of Pre-Metal and Metal Levels for 0.5 .mu.m and 0.35 .mu.m Logic CMOS Processes., 1994 Proceeding On Advanced Metallization for ULSI Applications, pp. 341-349.

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