VLSI fabrication processes for introducing pores into...

Details VLSI fabrication processes for introducing pores into... VLSI fabrication processes for introducing pores into...

2006-11-28

2009-12-08

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C438S960000, C257SE21273

Reexamination Certificate

active

07629224

ABSTRACT:
Porous dielectric layers are produced by introducing pores in pre-formed composite dielectric layers. The pores may be produced after the barrier material, the metal or other conductive material is deposited to form a metallization layer. In this manner, the conductive material is provided with a relatively smooth continuous surface on which to deposit.

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