Vialess shorting bars for magnetoresistive devices

Details Vialess shorting bars for magnetoresistive devices Vialess shorting bars for magnetoresistive devices

1988-03-15

1990-01-30

Moffitt, James W.

Coating processes

Electrical product produced

Metal coating

427130, 427131, 427132, 427259, 427265, 427286, 365158, 365173, G11C 1115

Patent

active

048972886

ABSTRACT:
A magnetic solid state device, such as a magnetoresistive memory cell, includes first and second layers of magnetoresistive material. The first and second layers are separated by a third layer which prevents exchange coupling between the magnetic dipoles of the first and second layers. The first, second and third layers are formed as a strip. A fourth layer of a resistive material, such as nitrogen doped tantalum, overlies the first layer. The fourth layer includes spaced, raised portions over which electrically conductive material, such as TiW, may be formed on top of the raised portions.

REFERENCES:
patent: 3015807 (1962-01-01), Pohm et al.
patent: 3125743 (1964-03-01), Pohm et al.
patent: 3375503 (1968-03-01), Bertelsen
patent: 3452334 (1969-06-01), Voegeli
patent: 3466632 (1969-09-01), Wang
patent: 3484756 (1969-12-01), Voegeli
patent: 3524173 (1970-08-01), Wolf
patent: 3525023 (1970-08-01), Pollack
patent: 3587069 (1971-06-01), Goto
patent: 3623038 (1971-11-01), Franklin
patent: 3701983 (1972-10-01), Franklin
patent: 3798623 (1974-03-01), Kaske et al.
patent: 3996575 (1976-12-01), Battarel
patent: 4024489 (1977-05-01), Bajorek et al.
patent: 4079360 (1978-03-01), Ookubo et al.
patent: 4097802 (1978-06-01), Mahopac
patent: 4208725 (1980-06-01), Paul et al.
patent: 4731757 (1988-03-01), Daughton et al.
patent: 4780848 (1988-10-01), Daughton et al.
J. M. Daughton et al., IBM Technical Disclosure Bulletin, vol. 8, No. 11, Apr. 1966, pp. 1613-1614.
J. Berchier et al., Magnetoresistive Switching of Small Permalloy Sandwich Structures, J. Appl. Phys., vol. 55, No. 2, Jan. 15, 1984, pp. 487-492.
Ooyen et al., Magnetoresistance in Laminated NiFe Films, J. Appl. Phys. 53(3), Mar. 1982--pp. 2596-2598.
Ahn et al., Fabrication of Contiguous--Disk Magnetic Bubble Devices, IEEE Transactions on Magnetics, vol. MAG-15, No. 1, Jan. 1980.

Affiliated with

Also associated with

Rating

Vialess shorting bars for magnetoresistive devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Vialess shorting bars for magnetoresistive devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vialess shorting bars for magnetoresistive devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1922917