Via structures and trench structures and dual damascene...

Details Via structures and trench structures and dual damascene... Via structures and trench structures and dual damascene...

2007-04-04

2008-10-14

Fourson, George (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S622000, C257S635000, C257SE21577, C257SE21585

Reexamination Certificate

active

07436009

ABSTRACT:
Via hole and trench structures and fabrication methods are disclosed. The structure includes a conductive layer in a dielectric layer, and a via structure in the dielectric layer contacting a portion of a surface of the conductive layer. The via structure includes the conductive liner contacting the portion of the surface of the first conductive layer. A trench structure is formed on the via structure in the dielectric without the conductive liner layer in the trench.

REFERENCES:
patent: 2001/0002333 (2001-05-01), Huang et al.
patent: 2003/0077897 (2003-04-01), Tsai et al.
patent: 2003/0207564 (2003-11-01), Ahn et al.
patent: 2004/0175921 (2004-09-01), Cowley et al.
patent: 2004/0224497 (2004-11-01), Barth
patent: 2005/0124164 (2005-06-01), Sakata et al.
patent: 2005/0153505 (2005-07-01), Gambino et al.
patent: 2005/0167780 (2005-08-01), Edelstein et al.

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