Via bottom copper/barrier interface improvement to resolve...

Details Via bottom copper/barrier interface improvement to resolve... Via bottom copper/barrier interface improvement to resolve...

2005-03-15

2005-03-15

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S630000, C438S649000, C438S651000, C438S655000, C438S682000

Reexamination Certificate

active

06867135

ABSTRACT:
A method of forming a copper/barrier layer interface comprising the following sequential steps. A structure having a lower copper layer formed thereover is provide. A patterned dielectric layer is formed over the lower copper layer. The patterned dielectric layer having an opening exposing a portion of the lower copper layer. The exposed portion of the lower copper layer is converted to a copper silicide portion. A barrier layer is formed upon the patterned dielectric layer and the copper silicide portion, lining the opening, whereby the lower copper layer/barrier layer interface is formed such that the barrier layer contacts the copper silicide portion to form an interface.

REFERENCES:
patent: 4507851 (1985-04-01), Joyner et al.
patent: 4800177 (1989-01-01), Nakamae
patent: 5447887 (1995-09-01), Filipiak et al.
patent: 5998873 (1999-12-01), Blair et al.
patent: 6046108 (2000-04-01), Liu et al.
patent: 6211084 (2001-04-01), Ngo et al.
patent: 6214731 (2001-04-01), Nogami et al.
patent: 6251775 (2001-06-01), Armbrust et al.

Affiliated with

Also associated with

Rating

Via bottom copper/barrier interface improvement to resolve... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Via bottom copper/barrier interface improvement to resolve..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Via bottom copper/barrier interface improvement to resolve... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3456282