Via bottom copper/barrier interface improvement to resolve...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S630000, C438S649000, C438S651000, C438S655000, C438S682000

Reexamination Certificate

active

06867135

ABSTRACT:
A method of forming a copper/barrier layer interface comprising the following sequential steps. A structure having a lower copper layer formed thereover is provide. A patterned dielectric layer is formed over the lower copper layer. The patterned dielectric layer having an opening exposing a portion of the lower copper layer. The exposed portion of the lower copper layer is converted to a copper silicide portion. A barrier layer is formed upon the patterned dielectric layer and the copper silicide portion, lining the opening, whereby the lower copper layer/barrier layer interface is formed such that the barrier layer contacts the copper silicide portion to form an interface.

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patent: 6251775 (2001-06-01), Armbrust et al.

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