Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-11-21
2006-11-21
Lee, Eddie (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE23151
Reexamination Certificate
active
07138714
ABSTRACT:
The present invention provides an interconnect structure that includes a diffusion barrier which is positioned within the structure in a fashion that increases the reliability and lifetime of the interconnect structure.
REFERENCES:
patent: 6157081 (2000-12-01), Nariman et al.
patent: 6433429 (2002-08-01), Stamper
patent: 6492270 (2002-12-01), Lou
patent: 6750541 (2004-06-01), Ohtsuka et al.
patent: 6753610 (2004-06-01), Fukiage
patent: 6806579 (2004-10-01), Cowley et al.
patent: 6821879 (2004-11-01), Wong
patent: 6828223 (2004-12-01), Chuang
patent: 6942546 (2005-09-01), Desai et al.
patent: 6958291 (2005-10-01), Yu et al.
patent: 2005/0029669 (2005-02-01), Inoue et al.
Agarwala Birendra N.
Barile Conrad A
Nayak Jawahar P.
Nguyen Du B.
Rathore Hazara S.
Arena Andrew O.
Capella, Esq. Steven
International Business Machines - Corporation
Lee Eddie
Scully , Scott, Murphy & Presser, P.C.
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