Very thin PECVD SiO.sub.2 in 0.5 micron and 0.35 micron technolo

Details Very thin PECVD SiO.sub.2 in 0.5 micron and 0.35 micron technolo Very thin PECVD SiO.sub.2 in 0.5 micron and 0.35 micron technolo

1997-06-24

2000-04-25

Picardi, Leo P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257632, 257636, 257383, 438778, 438785, 438788, H01L 21265

Patent

active

060547359

ABSTRACT:
A very thin (less than 350 angstrom) layer of silicon dioxide (SiO.sub.2) is produced using plasma-enhanced chemical vapor deposition (PECVD) by substantially increasing the time duration of pre-coat and soak time steps of the PECVD process and substantially reducing the flow of silane (SiH.sub.4), the applied high frequency power and the applied pressure in the PECVD process.

REFERENCES:
patent: 3594607 (1971-07-01), Frankland
patent: 4527007 (1985-07-01), Fuse
patent: 4681653 (1987-07-01), Purdes et al.
patent: 4877641 (1989-10-01), Dory
patent: 5040046 (1991-08-01), Chhabra et al.
patent: 5264712 (1993-11-01), Murata et al.
patent: 5284789 (1994-02-01), Mori et al.
patent: 5362526 (1994-11-01), Wang et al.
patent: 5427970 (1995-06-01), Hsue et al.
patent: 5491099 (1996-02-01), Hsu
patent: 5814565 (1995-02-01), Reichert et al.

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