Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-05-16
2006-05-16
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S623000, C438S633000, C257S759000, C257S760000
Reexamination Certificate
active
07045453
ABSTRACT:
A structure incorporates very low dielectric constant (k) insulators with copper wiring to achieve high performance interconnects. The wiring is supported by a relatively durable low k dielectric such as SiLk or SiO2 and a very low k and less-robust gap fill dielectric is disposed in the remainder of the structure, so that the structure combines a durable layer for strength with a very low k dielectric for interconnect electrical performance.
REFERENCES:
patent: 5559560 (1996-09-01), Lee
patent: 6146986 (2000-11-01), Wagganer
patent: 6252290 (2001-06-01), Quek et al.
patent: 6355555 (2002-03-01), Park
patent: 6413879 (2002-07-01), Maeda
patent: 6753258 (2004-06-01), Gaillard et al.
Canaperi Donald F.
Dalton Timothy J.
Gates Stephen M.
Krishnan Mahadevaiyer
Nitta Satya V.
Fourson George
Harrington & Smith ,LLP
International Business Machines - Corporation
Maldonado Julio J.
Morris Daniel P.
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