Vertically-stacked plate interdigital capacitor structure

Details Vertically-stacked plate interdigital capacitor structure Vertically-stacked plate interdigital capacitor structure

2007-03-13

2007-03-13

Whitehead, Jr., Carl (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

10904825

ABSTRACT:
A vertically-stacked interdigital plate capacitor structure includes at least a first conductive plate, at least a second conductive plate parallel to the first conductive plate, and an inter-metal dielectric layer disposed between the first conductive plate and the second conductive plate. The first conductive plate includes a plurality of first conductive bars vertically stacked, each first conductive bar is electrically connected to the first conductive bar positioned thereunder by a plurality of first conductive vias, and each first conductive via has a rectangular shape. The second conductive plate includes a plurality of second conductive bars vertically stacked, each second conductive bar is electrically connected to the second conductive bar positioned thereunder by a plurality of second conductive vias, each second conductive via has a rectangular shape, and each second conductive via is corresponding to and parallel to each first conductive via.

REFERENCES:
patent: 6528366 (2003-03-01), Tu et al.

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