Vertical via/contact with undercut dielectric

Details Vertical via/contact with undercut dielectric Vertical via/contact with undercut dielectric

1997-06-04

1999-04-27

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438701, 438673, H01L 2144

Patent

active

058973745

ABSTRACT:
A new method of metallization of an integrated circuit is described. A dielectric layer is provided over a first conducting layer over an insulating layer over a semiconductor substrate. The dielectric layer is covered with a layer of photoresist which is patterned to provide a photoresist mask. At least one via hole is etched through the dielectric layer to the first conducting layer. The photoresist mask is removed. The via hole is etched through the first conducting layer resulting in an undercutting of the dielectric layer. The exposed surfaces of the first conducting layer are cleaned. The insulating layer overhang protects the exposed surfaces from damage or contamination. A second conducting layer is deposited over the surface of the dielectric layer and within the via hole completing the metallization in the fabrication of the integrated circuit.

REFERENCES:
patent: 4943539 (1990-07-01), Wilson et al.
patent: 4997789 (1991-03-01), Keller et al.
patent: 5204286 (1993-04-01), Doan
patent: 5231053 (1993-07-01), Bost et al.
patent: 5336371 (1994-08-01), Chung et al.
patent: 5413962 (1995-05-01), Lur et al.
patent: 5439848 (1995-08-01), Hsu et al.
patent: 5444020 (1995-08-01), Lee et al.
patent: 5444022 (1995-08-01), Gardner
patent: 5470790 (1995-11-01), Myers et al.
patent: 5637534 (1997-06-01), Takeyasu et al.
T. Hasegawa, et al. "Via Filling on Al Films by Selective CVD W Using Al Isotropic Etching" Extended Abstracts, Japan Soc. of Appl. Phys. 52.sup.nd Fall Meeting p. 718, Oct. 1991.
IBM Tech. Discl. Bull. vol. 34 No. 4B p. 288. "Rooted Refractory Metal On Al-Cu . . . ", Sep. 1991.
Hisako Ono, et al. "Development of a Planarized Al-Si Contact Filling Technology" Proc. 7th International IEEE VLSI Multilevel Interconnect Conf. (1990) pp. 76-82.

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