Vertical-type semiconductor devices

Details Vertical-type semiconductor devices Vertical-type semiconductor devices

2009-02-27

2011-11-22

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S202000, C257S204000, C257S329000, C257S350000, C257S351000, C257SE21423, C257SE21379, C257SE29309

Reexamination Certificate

active

08063438

ABSTRACT:
In a vertical-type memory device and a method of manufacturing the vertical-type memory device, the vertical memory device includes an insulation layer pattern of a linear shape provided on a substrate, pillar-shaped single-crystalline semiconductor patterns provided on both sidewalls of the insulation layer pattern and transistors provided on a sidewall of each of the single-crystalline semiconductor patterns. The transistors are arranged in a vertical direction of the single-crystalline semiconductor pattern, and thus the memory device may be highly integrated.

REFERENCES:
patent: 7005350 (2006-02-01), Walker et al.
patent: 2007/0158736 (2007-07-01), Arai et al.
patent: 2007/0167012 (2007-07-01), Tanaka
patent: 2008/0173928 (2008-07-01), Arai et al.
patent: 2008/0179659 (2008-07-01), Enda et al.
patent: 2009/0180324 (2009-07-01), Ramaswamy et al.
patent: 2007180389 (2007-07-01), None
patent: 100739989 (2007-07-01), None

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