Vertical type semiconductor device, method of manufacturing...

Details Vertical type semiconductor device, method of manufacturing... Vertical type semiconductor device, method of manufacturing...

2011-06-07

2011-06-07

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S329000, C257S214000, C257SE29309

Reexamination Certificate

active

07956407

ABSTRACT:
A vertical pillar semiconductor device includes a substrate, a single crystalline semiconductor pattern, a gate insulation layer structure and a gate electrode. The substrate may include a first impurity region. The single crystalline semiconductor pattern may be on the first impurity region. The single crystalline semiconductor pattern has a pillar shape substantially perpendicular to the substrate. A second impurity region may be formed in an upper portion of the single crystalline semiconductor pattern. The gate insulation layer structure may include a charge storage pattern, the gate insulation layer structure on a sidewall of the single crystalline semiconductor pattern. The gate electrode may be formed on the gate insulation layer structure and opposite the sidewall of the single crystalline semiconductor pattern. The gate electrode has an upper face substantially lower than that of the single crystalline semiconductor pattern.

REFERENCES:
patent: 10-2006-0001876 (2006-01-01), None
patent: 10-2007-0089441 (2007-08-01), None
patent: 10-2008-0018040 (2008-02-01), None

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