Vertical type semiconductor device and method for...

Details Vertical type semiconductor device and method for... Vertical type semiconductor device and method for...

2008-09-02

2008-09-02

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S220000, C257S328000, C257S329000, C257S334000, C257SE29080

Reexamination Certificate

active

11442206

ABSTRACT:
A vertical type semiconductor device includes: a silicon substrate having a first surface and a second surface; a first electrode disposed on the first surface of the silicon substrate; and a second electrode disposed on the second surface of the silicon substrate. Current is capable of flowing between the first electrode and the second electrode in a vertical direction of the silicon substrate. The second surface of the silicon substrate includes a re-crystallized silicon layer. The second electrode includes an aluminum film so that the aluminum film contacts the re-crystallized silicon layer with ohmic contact.

REFERENCES:
patent: 6927167 (2005-08-01), Fukuda et al.
patent: 2004/0080015 (2004-04-01), Mauder et al.
patent: 2004/0171204 (2004-09-01), Slater, Jr. et al.
patent: A-10-163467 (1998-06-01), None
patent: A-2005-19830 (2005-01-01), None

Affiliated with

Also associated with

Rating

Vertical type semiconductor device and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Vertical type semiconductor device and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vertical type semiconductor device and method for... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3924982