Vertical type semiconductor device

Details Vertical type semiconductor device Vertical type semiconductor device

2009-11-03

2011-11-22

Nguyen, Dao (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S156000, C257S206000, C257S207000, C257S328000, C257S329000, C257S331000, C257S332000, C257SE21252, C257SE21652, C257SE21657, C438S268000, C438S270000, C438S275000, C438S277000, C438S278000

Reexamination Certificate

active

08063441

ABSTRACT:
A vertical pillar semiconductor device may include a substrate, a group of channel patterns, a gate insulation layer pattern and a gate electrode. The substrate may be divided into an active region and an isolation layer. A first impurity region may be formed in the substrate corresponding to the active region. The group of channel patterns may protrude from a surface of the active region and may be arranged parallel to each other. A second impurity region may be formed on an upper portion of the group of channel patterns. The gate insulation layer pattern may be formed on the substrate and a sidewall of the group of channel patterns. The gate insulation layer pattern may be spaced apart from an upper face of the group of channel patterns. The gate electrode may contact the gate insulation layer and may enclose a sidewall of the group of channel patterns.

REFERENCES:
patent: 6077745 (2000-06-01), Burns et al.
patent: 6239022 (2001-05-01), Seo et al.
patent: 6337497 (2002-01-01), Hanafi et al.
patent: 7767525 (2010-08-01), Manning et al.
patent: 1 091 413 (2001-04-01), None
patent: 10-2001-0061118 (2001-07-01), None
patent: 10-2003-0031600 (2003-04-01), None

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