Vertical-type semiconductor device

Details Vertical-type semiconductor device Vertical-type semiconductor device

2011-06-14

2011-06-14

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S390000, C257SE29118, C257SE29122, C257SE29131, C257SE29262

Reexamination Certificate

active

07960780

ABSTRACT:
In a vertical-type semiconductor device, a method of manufacturing the same and a method of operating the same, the vertical-type semiconductor device includes a single-crystalline semiconductor pattern having a pillar shape provided on a substrate, a gate surrounding sidewalls of the single-crystalline semiconductor pattern and having an upper surface lower than an upper surface of the single-crystalline semiconductor pattern, a mask pattern formed on the upper surface of the gate, the mask pattern having an upper surface coplanar with the upper surface of the single-crystalline semiconductor pattern, a first impurity region in the substrate under the single-crystalline semiconductor pattern, and a second impurity region under the upper surface of the single-crystalline semiconductor pattern. The vertical-type pillar transistor formed in the single-crystalline semiconductor pattern may provide excellent electrical properties. The mask pattern is not provided on the upper surface of the single-crystalline semiconductor pattern in the second impurity region, to thereby reduce failures of processes.

REFERENCES:
patent: 7034336 (2006-04-01), Willer
patent: 7132355 (2006-11-01), Ramaswamy et al.
patent: 7256109 (2007-08-01), Moriguchi et al.

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