Vertical type nanotube semiconductor device

Details Vertical type nanotube semiconductor device Vertical type nanotube semiconductor device

2006-01-05

2008-08-12

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S401000, C257SE27086, C257SE29130, C977S938000

Reexamination Certificate

active

07411241

ABSTRACT:
A vertical type nanotube semiconductor device including a nanotube bit line, disposed on a substrate and in parallel with the substrate and composed of a nanotube with a conductive property, and a nanotube pole connected to the bit line vertically to the substrate and provides a channel through which carriers migrate. By manufacturing the semiconductor device using the bit line composed of the nanotube, cutoff of an electrical connection of the bit line is prevented and an integration density of the semiconductor device can be improved.

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patent: 2004-146520 (2004-05-01), None
patent: 1020000050788 (2000-08-01), None
patent: 1020020001259 (2002-01-01), None

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