Vertical-type metal insulator semiconductor field effect...

Details Vertical-type metal insulator semiconductor field effect... Vertical-type metal insulator semiconductor field effect...

2006-10-03

2009-06-09

Mandala, Jr., Victor A (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S212000, C257S329000, C257S328000, C257SE21383

Reexamination Certificate

active

07544570

ABSTRACT:
In a vertical-type metal insulator field effect transistor device having a first conductivity type drain region layer, a plurality of second conductivity type base regions are produced and arranged in the first conductivity type drain region layer, and a first conductivity type source region is produced in each of the second conductivity type base regions. Both a gate insulating layer and a gate electrode layer are formed on the first conductivity type drain region layer such that a plurality of unit transistor cells are produced in conjunction with the second conductivity type base regions and the first conductivity type source regions, and each of the unit transistor cells includes respective span portions of the gate insulating layer and the gate electrode layer, which bridge a space between the first conductivity type source regions formed in two adjacent second conductivity base regions. A buried-insulator region is produced in the first conductivity type drain region layer beneath each of the portions of the gate electrode layer.

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Japanese Office Action dated May 1, 2008 with Partial English translation.

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