Vertical transistors and output prediction logic circuits...

Details Vertical transistors and output prediction logic circuits... Vertical transistors and output prediction logic circuits...

2005-05-31

2005-05-31

Thomas, Tom (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Including semiconductor material other than silicon or...

Containing germanium, ge

C257S191000, C257S335000

Reexamination Certificate

active

06900521

ABSTRACT:
Very fast integrated OPL circuits, such as pseudo-NMOS OPL and dynamic OPL, comprising CMOS gate arrays having ultra-thin vertical NMOS transistors are disclosed. The ultra-thin vertical NMOS transistors of the CMOS gate arrays are formed with relaxed silicon germanium (SiGe) body regions with graded germanium content and strained silicon channels.

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