Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-05-09
2006-05-09
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S270000
Reexamination Certificate
active
07041556
ABSTRACT:
The invention relates to a vertical transistor and an oxidation process that achieves a substantially curvilinear recess bottom. The recess serves as the gate receptacle that may facilitate a more uniform gate oxide layer. One embodiment relates to a storage cell that is disposed in the recess along with an electrode. Another embodiment relates to a system that includes the vertical transistor or the vertical storage cell.
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Chaudhari Chandra
Micro)n Technology, Inc.
Schwegman Lundberg Woessner & Kluth P.A.
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