Vertical thin film transistor

Details Vertical thin film transistor Vertical thin film transistor

2006-02-07

2006-02-07

Abraham, Fetsum (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having junction gate

C438S329000, C438S149000

Reexamination Certificate

active

06995053

ABSTRACT:
A vertical thin-film transistor (V-TFT) is provided along with a method for forming the V-TFT. The method comprises: providing a substrate made from a material such as Si, quartz, glass, or plastic; conformally depositing an insulating layer overlying the substrate; forming a gate, having sidewalls and a thickness, overlying a substrate insulation layer; forming a gate oxide layer overlying the gate sidewalls, and a gate insulation layer overlying the gate top surface; etching the exposed substrate insulation layer; forming a first source/drain region overlying the gate insulation layer; forming a second source/drain region overlying the substrate insulation layer, adjacent a first gate sidewall; and, forming a channel region overlying the first gate sidewall with a channel length about equal to the thickness of the gate, interposed between the first and second source/drain regions.

REFERENCES:
patent: 5032529 (1991-07-01), Beitman et al.
patent: 6566714 (2003-05-01), Deane et al.
patent: 6881994 (2005-04-01), Lee et al.
patent: 2004/0202032 (2004-10-01), Forbes

Affiliated with

Also associated with

Rating

Vertical thin film transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Vertical thin film transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vertical thin film transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3658520