Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-12-12
2006-12-12
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S319000, C257S321000
Reexamination Certificate
active
07148538
ABSTRACT:
Memory devices, arrays, and strings are described that facilitate the use of vertical floating gate memory cells in NAND architecture memory strings, arrays, and devices. NAND Flash memory strings, arrays, and devices in accordance with embodiments of the present invention, include vertical Flash memory cells to form NAND architecture memory cell strings and memory arrays. These vertical memory cell NAND architecture strings allow for an improved high density memory devices or arrays that can take advantage of the feature sizes semiconductor fabrication processes are generally capable of and still allow for appropriate device sizing for operational considerations.
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Leffert Jay & Polglaze P.A.
Micro)n Technology, Inc.
Vu Hung
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