Vertical memory device and method

Details Vertical memory device and method Vertical memory device and method

2007-11-14

2009-11-10

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S238000, C438S381000, C257SE21170, C257SE21229, C257SE21304, C257SE21278, C257SE21293, C257SE21646

Reexamination Certificate

active

07615428

ABSTRACT:
Method and apparatus are described for a memory cell includes a substrate, a body extending vertically from the substrate, a first gate having a vertical member and a horizontal member and a second gate comprising a vertical member and a horizontal member. The first gate is disposed laterally from the body and the second gate is disposed laterally from the first gate. The horizontal member of the first gate overlaps the horizontal member of the second gate.

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