Vertical memory cell and manufacturing method thereof

Details Vertical memory cell and manufacturing method thereof Vertical memory cell and manufacturing method thereof

2007-01-16

2007-01-16

Ngo, Ngan V. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S283000

Reexamination Certificate

active

10878016

ABSTRACT:
A vertical split gate memory cell of silicon-oxide-nitride-oxide-silicon (SONOS) type formed in a trench of a semiconductor substrate includes a first doping region, a second doping region, a conductive line, a conductive plug, a first insulating layer and a second insulating layer, wherein the conductive line and conductive plug serve as a select gate and a control gate of the vertical split gate memory cell, respectively. The first doping region of a first conductive type is underneath the bottom of the trench, whereas the second doping region of the first conductive type is beside the top of the trench. The conductive line serving as the select gate is formed in the bottom of the trench and in operation relation to the first doping region. The first insulating layer is between the conductive line and the first doping region for insulation. The conductive plug is formed above the conductive line, and insulated from the conductive line by the second insulating layer. As to the formation of isolating plugs, for example, composed of CVD oxide, between memory cells, it can be done by etching conductive lines into holes and filling up the holes with CVD oxide or by filling the trenches with oxide between memory cells first.

REFERENCES:
patent: 5386132 (1995-01-01), Wong
patent: 5739567 (1998-04-01), Wong
patent: 6087222 (2000-07-01), Jung Lin et al.
patent: 6391719 (2002-05-01), Lin et al.
patent: 6465836 (2002-10-01), Lin et al.
patent: 6583466 (2003-06-01), Lin et al.
patent: 6979857 (2005-12-01), Forbes
patent: 2005/0001258 (2005-01-01), Forbes
patent: 2005/0259467 (2005-11-01), Forbes
patent: 2005/0276117 (2005-12-01), Forbes

Affiliated with

Also associated with

Rating

Vertical memory cell and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Vertical memory cell and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vertical memory cell and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3738589