Vertical geometry InGaN LED

Details Vertical geometry InGaN LED Vertical geometry InGaN LED

2006-04-25

2006-04-25

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S022000, C257S050000, C257S045000, C257S046000, C257S097000, C257S103000

Reexamination Certificate

active

07034328

ABSTRACT:
A vertical geometry light emitting diode is disclosed that is capable of emitting light in the red, green, blue, violet and ultraviolet portions of the electromagnetic spectrum. The light emitting diode includes a conductive silicon carbide substrate, an InGaN quantum well, a conductive buffer layer between the substrate and the quantum well, a respective undoped gallium nitride layer on each surface of the quantum well, and ohmic contacts in a vertical geometry orientation.

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