4. Active solid-state devices (e.g., transistors, solid-state diode
  5. Incoherent light emitter structure
  6. With heterojunction

Heidi Marie Dieringer

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Vertical geometry InGaN LED

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate

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Vertical geometry InGaN LED

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate

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Vertical geometry ingan LED

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate

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Vertical geometry InGaN LED

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reissue Patent

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Profile ID: LFUS-PAI-P-2542988

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