Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-11-26
2010-06-15
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S669000, C257SE21159
Reexamination Certificate
active
07736980
ABSTRACT:
According to one embodiment of the present invention, a method of forming an apparatus comprises forming a plurality of deep trenches and a plurality of shallow trenches in a first region of a substrate. At least one of the shallow trenches is positioned between two deep trenches. The plurality of shallow trenches and the plurality of deep trenches are parallel to each other. The method further comprises depositing a layer of conductive material over the first region and a second region of the substrate. The method further comprises etching the layer of conductive material to define a plurality of lines separated by a plurality of gaps over the first region of the substrate, and a plurality of active device elements over the second region of the substrate. The method further comprises masking the second region of the substrate. The method further comprises removing the plurality of lines from the first region of the substrate, thereby creating a plurality of exposed areas from which the plurality of lines were removed. The method further comprises etching a plurality of elongate trenches in the plurality of exposed areas while the second region of the substrate is masked.
REFERENCES:
patent: 4234362 (1980-11-01), Riseman
patent: 4419809 (1983-12-01), Riseman et al.
patent: 4432132 (1984-02-01), Kinsbron et al.
patent: 4502914 (1985-03-01), Trumpp et al.
patent: 4508579 (1985-04-01), Goth et al.
patent: 4570325 (1986-02-01), Higuchi
patent: 4648937 (1987-03-01), Ogura et al.
patent: 4776922 (1988-10-01), Bhattascharyya et al.
patent: 4838991 (1989-06-01), Cote et al.
patent: 4984039 (1991-01-01), Douglas
patent: 5013680 (1991-05-01), Lowrey et al.
patent: 5315142 (1994-05-01), Acovic et al.
patent: 5319753 (1994-06-01), MacKenna et al.
patent: 5328810 (1994-07-01), Lowrey et al.
patent: 5330879 (1994-07-01), Dennison
patent: 5398205 (1995-03-01), Yamaguchi
patent: 5408116 (1995-04-01), Tanaka et al.
patent: 5502320 (1996-03-01), Yamada
patent: 5514885 (1996-05-01), Myrick
patent: 5578850 (1996-11-01), Fitch et al.
patent: 5677210 (1997-10-01), Park et al.
patent: 5679591 (1997-10-01), Lin et al.
patent: 5795830 (1998-08-01), Cronin et al.
patent: 5905285 (1999-05-01), Gardner et al.
patent: 5981333 (1999-11-01), Parekh et al.
patent: 6004862 (1999-12-01), Kim et al.
patent: 6010946 (2000-01-01), Hisamune et al.
patent: 6042998 (2000-03-01), Brueck et al.
patent: 6057573 (2000-05-01), Kirsch et al.
patent: 6063688 (2000-05-01), Doyle et al.
patent: 6071789 (2000-06-01), Yang et al.
patent: 6140172 (2000-10-01), Parekh
patent: 6143476 (2000-11-01), Ye et al.
patent: 6211044 (2001-04-01), Xiang et al.
patent: 6229169 (2001-05-01), Hofmann et al.
patent: 6282113 (2001-08-01), DeBrosse
patent: 6288454 (2001-09-01), Allman et al.
patent: 6291334 (2001-09-01), Somekh
patent: 6297554 (2001-10-01), Lin
patent: 6319782 (2001-11-01), Nakabayashi
patent: 6340614 (2002-01-01), Tseng
patent: 6348380 (2002-02-01), Weimer et al.
patent: 6362057 (2002-03-01), Taylor et al.
patent: 6404056 (2002-06-01), Kuge et al.
patent: 6423474 (2002-07-01), Holscher
patent: 6455372 (2002-09-01), Weimer
patent: 6468887 (2002-10-01), Iwasa et al.
patent: 6475867 (2002-11-01), Hui et al.
patent: 6500763 (2002-12-01), Kim et al.
patent: 6514884 (2003-02-01), Maeda
patent: 6522584 (2003-02-01), Chen et al.
patent: 6548396 (2003-04-01), Naik et al.
patent: 6551878 (2003-04-01), Clampitt et al.
patent: 6558756 (2003-05-01), Sugahara et al.
patent: 6573030 (2003-06-01), Fairbairn et al.
patent: 6597203 (2003-07-01), Forbes
patent: 6599684 (2003-07-01), Reynolds et al.
patent: 6602779 (2003-08-01), Li et al.
patent: 6627933 (2003-09-01), Juengling
patent: 6632741 (2003-10-01), Clevenger et al.
patent: 6638441 (2003-10-01), Chang et al.
patent: 6667237 (2003-12-01), Metzler
patent: 6673684 (2004-01-01), Huang et al.
patent: 6686245 (2004-02-01), Mathew et al.
patent: 6689695 (2004-02-01), Lui et al.
patent: 6693324 (2004-02-01), Maegawa et al.
patent: 6706571 (2004-03-01), Yu et al.
patent: 6707092 (2004-03-01), Sasaki
patent: 6709807 (2004-03-01), Hallock et al.
patent: 6734063 (2004-05-01), Willer et al.
patent: 6734107 (2004-05-01), Lai et al.
patent: 6737333 (2004-05-01), Chen et al.
patent: 6744094 (2004-06-01), Forbes
patent: 6756284 (2004-06-01), Sharma
patent: 6764949 (2004-07-01), Bonser et al.
patent: 6768663 (2004-07-01), Ogata
patent: 6773998 (2004-08-01), Fisher et al.
patent: 6777725 (2004-08-01), Willer et al.
patent: 6835663 (2004-12-01), Lipinski
patent: 6844591 (2005-01-01), Tran
patent: 6846618 (2005-01-01), Hsu et al.
patent: 6881627 (2005-04-01), Forbes et al.
patent: 6888187 (2005-05-01), Brown et al.
patent: 6890812 (2005-05-01), Forbes et al.
patent: 6890858 (2005-05-01), Juengling et al.
patent: 6893972 (2005-05-01), Rottstegge et al.
patent: 6900521 (2005-05-01), Forbes et al.
patent: 6924191 (2005-08-01), Liu et al.
patent: 6936507 (2005-08-01), Tang et al.
patent: 6939808 (2005-09-01), Tzou et al.
patent: 6951709 (2005-10-01), Li
patent: 7005240 (2006-02-01), Manger et al.
patent: 7098105 (2006-08-01), Juengling
patent: 7105431 (2006-09-01), Yin et al.
patent: 7109544 (2006-09-01), Schloesser et al.
patent: 7115525 (2006-10-01), Abatchev et al.
patent: 7119020 (2006-10-01), Okamura et al.
patent: 7151040 (2006-12-01), Tran et al.
patent: 7176109 (2007-02-01), Ping et al.
patent: 7391070 (2008-06-01), Juengling
patent: 2002/0001960 (2002-01-01), Wu et al.
patent: 2002/0063110 (2002-05-01), Cantell et al.
patent: 2002/0068243 (2002-06-01), Hwang et al.
patent: 2002/0125536 (2002-09-01), Iwasa et al.
patent: 2002/0130348 (2002-09-01), Tran
patent: 2002/0135029 (2002-09-01), Ping et al.
patent: 2002/0158273 (2002-10-01), Satoh et al.
patent: 2003/0109102 (2003-06-01), Kujirai et al.
patent: 2003/0119307 (2003-06-01), Bekiaris et al.
patent: 2003/0129001 (2003-07-01), Kisu et al.
patent: 2003/0164513 (2003-09-01), Ping et al.
patent: 2003/0203564 (2003-10-01), McQueen et al.
patent: 2003/0230234 (2003-12-01), Nam et al.
patent: 2003/0235076 (2003-12-01), Forbes
patent: 2004/0017989 (2004-01-01), So
patent: 2004/0036095 (2004-02-01), Brown et al.
patent: 2005/0079662 (2005-04-01), Miki
patent: 2005/0151206 (2005-07-01), Schwerin
patent: 2005/0186746 (2005-08-01), Lee et al.
patent: 2005/0202672 (2005-09-01), Divakaruni et al.
patent: 2005/0207264 (2005-09-01), Hsieh et al.
patent: 2006/0022248 (2006-02-01), Fischer et al.
patent: 2006/0028859 (2006-02-01), Forbes
patent: 2006/0046200 (2006-03-01), Abatchev et al.
patent: 2006/0046201 (2006-03-01), Sandhu et al.
patent: 2006/0046407 (2006-03-01), Juengling
patent: 2006/0046484 (2006-03-01), Abatchev et al.
patent: 2006/0083996 (2006-04-01), Kim
patent: 2006/0211260 (2006-09-01), Tran et al.
patent: 2006/0216293 (2006-09-01), Couto et al.
patent: 2006/0231900 (2006-10-01), Lee et al.
patent: 2006/0263699 (2006-11-01), Abatchev et al.
patent: 2006/0273456 (2006-12-01), Sant et al.
patent: 2006/0278911 (2006-12-01), Eppich
patent: 2006/0281266 (2006-12-01), Wells
patent: 2007/0145450 (2007-06-01), Wang et al.
patent: 280 851 (1990-07-01), None
patent: 44 08 764 (1994-09-01), None
patent: 199 28 781 (2000-07-01), None
patent: 10361695 (2005-02-01), None
patent: 0 227 303 (1987-07-01), None
patent: 0 491 408 (1992-06-01), None
patent: 1 357 433 (2003-10-01), None
patent: 2404083 (2005-01-01), None
patent: 05343370 (1993-12-01), None
patent: H8-55908 (1996-02-01), None
patent: H8-55920 (1996-02-01), None
patent: WO 01/01489 (2001-01-01), None
patent: WO 02/099864 (2002-12-01), None
patent: WO 2004/073044 (2004-08-01), None
patent: WO 2005/010973 (2005-02-01), None
patent: WO 2005/119741 (2005-12-01), None
patent: WO 2006/026699 (2006-03-01), None
Office Action dated Jan. 29, 2008 for U.S. Appl. No. 11/367,020, filed Mar. 2, 2006.
Office Action dated Jul. 11, 2008 for U.S. Appl. No. 11/367,020, filed Mar. 2, 2006.
Office Action dated Jan. 8, 2009 for U.S. Appl. No. 11/367,020, filed Mar. 2, 2006.
Office Action dated Sep. 23, 2009 for U.S. Appl. No. 11/367,020, filed Mar. 2, 2006.
International Preliminary Report on Patentability dated May 28, 2008, Appl
Ghyka Alexander G
Knobbe Martens Olson & Bear LLP
MICRON Technology, Inc.
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