Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-03-05
1997-11-18
Whitehead, Jr., Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257135, 257263, 257328, H01L 2976, H01L 2994
Patent
active
056891270
ABSTRACT:
A vertical double-gate field effect transistor includes a source layer, an epitaxial channel layer and a drain layer arranged in a stack on a bulk or SOI substrate. The gate oxide is thermally grown on the sides of the stack using differential oxidation rates to minimize input capacitance problems. The gate wraps around one end of the stack, while contacts are formed on a second end. An etch-stop layer embedded in the second end of the stack enables contact to be made directly to the channel layer.
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Chu Jack Oon
Hsu Louis Lu-Chen
Mandelman Jack Allan
Sun Yuan-Chen
Taur Yuan
International Business Machines - Corporation
Murray Susan M.
Whitehead Jr. Carl W.
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