Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-11-02
2008-08-26
Estrada, Michelle (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S135000, C257S139000, C257S168000, C257S175000, C257S341000, C257S342000, C257SE29012, C257SE29027, C257SE29066
Reexamination Certificate
active
07417282
ABSTRACT:
The present invention disclosed herein is a Vertical Double-Diffused Metal Oxide Semiconductor (VDMOS) device incorporating a reverse diode. This device includes a plurality of source regions isolated from a drain region. A source region in close proximity to the drain region is a first diffusion structure in which a heavily doped diffusion layer of a second conductivity type is formed in a body region of a second conductivity type. Another source region is a second diffusion structure in which a heavily doped diffusion layer of a first conductivity type and a heavily doped diffusion layer of the second conductivity type are formed in the body region of the second conductivity type. An impurity diffusion structure of the source region in close proximity to the drain region is changed to be operated as a diode, thereby forming a strong current path to ESD (Electro-Static Discharge) or EOS (Electrical Over Stress). As a result, it is possible to prevent the device from being broken down.
REFERENCES:
patent: 4819044 (1989-04-01), Murakami
patent: 4975751 (1990-12-01), Beasom
patent: 5814860 (1998-09-01), Furuta
patent: 5877527 (1999-03-01), Okabe et al.
patent: 5925910 (1999-07-01), Menegoli
patent: 5977588 (1999-11-01), Patel
patent: 6133107 (2000-10-01), Menegoli
patent: 6194761 (2001-02-01), Chiozzi et al.
patent: 6225642 (2001-05-01), Liao
patent: 6365932 (2002-04-01), Kouno et al.
patent: 6815794 (2004-11-01), Shin et al.
patent: 6867476 (2005-03-01), Lee
patent: 6894350 (2005-05-01), Shimizu et al.
patent: 6927452 (2005-08-01), Shin et al.
patent: 7095084 (2006-08-01), Ronsisvalle
patent: 2004/0119116 (2004-06-01), Byeon et al.
patent: 06-140632 (1994-05-01), None
patent: 10-284731 (1998-10-01), None
patent: 2000-200902 (2000-07-01), None
patent: 2001127294 (2001-05-01), None
patent: 2003-303964 (2003-10-01), None
patent: 10-2004-0070692 (2004-08-01), None
Office Action in German Patent Application 10 2005 061 378.0-33.
English Abstract for Publication No. 06-140632.
English Abstract for Publication No. 2003-33964.
Jang Sung-Pil
Jeon Chan-Hee
Kim Han-Gu
Estrada Michelle
F. Chau & Associates LLC
Samsung Electronics Co,. Ltd.
Stark Jarrett J
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