Vertical channel transistors and memory devices including...

Details Vertical channel transistors and memory devices including... Vertical channel transistors and memory devices including...

2011-07-12

2011-07-12

Gurley, Lynne A (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S392000, C257SE27096

Reexamination Certificate

active

07977736

ABSTRACT:
A semiconductor device is provided which includes an NMOS vertical channel transistor located on a substrate and including a p+ polysilicon gate electrode surrounding a vertical p-channel region, and a PMOS vertical channel transistor located on the substrate and including an n+ polysilicon gate electrode surrounding a vertical n-channel region. The NMOS and PMOS vertical channel transistors are optionally operable in a CMOS operational mode.

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