Vertical body-contacted SOI transistor

Details Vertical body-contacted SOI transistor Vertical body-contacted SOI transistor

2005-02-10

2008-10-21

Doan, Theresa T. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27093, C257SE21396

Reexamination Certificate

active

07439568

ABSTRACT:
A vertical field effect transistor (“FET”) is provided which includes a transistor body region and source and drain regions disposed in a single-crystal semiconductor-on-insulator (“SOI”) region of a substrate adjacent a sidewall of a trench. The substrate includes a buried insulator layer underlying the SOI region and a bulk region underlying the buried insulator layer. A buried strap conductively connects the SOI region to a lower node disposed below the SOI region and a body contact extends from the transistor body region to the bulk region of the substrate, the body contact being insulated from the buried strap.

REFERENCES:
patent: 5606188 (1997-02-01), Bronner et al.
patent: 6426252 (2002-07-01), Radens et al.
patent: 6429477 (2002-08-01), Mandelman et al.
patent: 6566177 (2003-05-01), Radens et al.
patent: 6750097 (2004-06-01), Divakaruni et al.
patent: 2002/0066925 (2002-06-01), Gruening et al.

Affiliated with

Also associated with

Rating

Vertical body-contacted SOI transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Vertical body-contacted SOI transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vertical body-contacted SOI transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3994414