Versatile system for triple-gated transistors with...

Details Versatile system for triple-gated transistors with... Versatile system for triple-gated transistors with...

2005-11-29

2005-11-29

Quach, T. N. (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S269000, C438S283000, C438S481000

Reexamination Certificate

active

06969644

ABSTRACT:
The present invention provides a system for producing a triple-gate transistor segment (300), utilizing a standard semiconductor substrate (302). The substrate has a plurality of isolation regions (304) formed along its upper surface in a distally separate relationship, defining a channel region (306). A form structure (308) is disposed atop the isolation regions, and defines a channel body area (310) over the channel region. A channel body structure (316) is disposed within the channel body area, and is engineered to provide a blunted corner or edge (318) along a perimeter of its upper exposed surface. The form structure is then removed, and subsequent processing is performed.

REFERENCES:
patent: 5899719 (1999-05-01), Hong
patent: 6077747 (2000-06-01), Nakamura
patent: 6368925 (2002-04-01), Weon et al.
patent: 6709982 (2004-03-01), Buynoski et al.
patent: 6858478 (2005-02-01), Chau et al.
patent: 2005/0093028 (2005-05-01), Chambers
patent: 2005/0095764 (2005-05-01), Chambers et al.

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