Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-06-05
2007-06-05
Andujar, Leonardo (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S197000, C257S198000, C257S565000
Reexamination Certificate
active
10196634
ABSTRACT:
Disclosed are apparatus and methods for designing electrical contact for a bipolar emitter structure. The area of an emitter structure (106, 306, 400, 404) and the required current density throughput of an electrical contact structure (108, 308, 402, 406) are determined. A required electrical contact area is determined based on the required current density, and the electrical contact structure is then designed to minimize the required electrical contact area with respect to the emitter structure area.
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“Reliable passivation of shallow emitters as well as nitride defined Schottky diodes” IBM technical disclosure bulletin, Feb. 1983, US vol. No. 25.
Chatterlee Tathagata
Smith Jeff
Springer Lily
Trogolo Joe
Andujar Leonardo
Brady III W. James
McLarty Peter K.
Sefer A.
Telecky , Jr. Frederick J.
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