Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-10
2007-04-10
Ha, Nathan W. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
11180149
ABSTRACT:
The present invention provides a system for limiting degradation of a first semiconductor structure (304) caused by an electric field (314), generated from within the semiconductor substrate (302) by high voltage on a second semiconductor structure (310). A semiconductor device (300) is adapted to reduce the effective magnitude of the field—as realized at structure304—to some fractional component (320), or to render the angle (322)—at which the field approaches the first structure through a first substrate region (306)—acute. Certain embodiments of the present invention provide for: lateral recession of the first semiconductor structure to abut an isolation structure (312), which is disposed between the second semiconductor structure and the first substrate region; lateral recession of the first semiconductor structure from the isolation structure, so as to form a moat therebetween; and a counter-doped region (316) within the first substrate region.
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Baldwin Greg C.
Chidambaram Periannan
Brady W. James
Ha Nathan W.
Keagy Rose Alyssa
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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